Kojundo Chemical Laboratory

Chemical Vapor Deposition (CVD) is a chemical process of making a required materials into a thin film by vaporizing the material and by utilizing chemical reactions in the gas phase at the surface of the substrate under various pressure conditions.
Volatile compounds are used as CVD materials and metal alkoxides are one of the representative CVD materials.

Product Line

Kojundo Chemical Lab. Co., Ltd. is a pioneering supplier of TEOS, which is most widely used as CVD materials for the semiconductor devices.
In addition to TEOS, we are supplying TMOP, TMB, TEOA, which are often used with TEOS and a variety of other CVD materials.

■ Materials for chemical vapor deposition

	Molecular Weight	Melting Point degrees Celsius	Vapor Pressures(Log₁₀P=)	Specific Gravity
Si(OC₂H₅)₄ TEOS	208.33	-82.5 deg C	log₁₀P=4.9936-856.8/ (t+118.13)(P:kPa,t:deg C)	0.9213(20/4)	Hydrolyzed by reacting gradually with water
P(OCH₃)₃ TMP	124.08	-78 deg C	log₁₀P=10.178-2024.1/ (t+273.15)(P:Pa,t:deg C)	1.0518(20)	Decomposed by reacting violently with water
PO(OCH₃)₃ TMOP	140.07	Alpha type-46.1 deg C Beta type-62.5 deg C	log₁₀P=10.17-2416/ (t+273.15)(P:Pa,t:deg C)	1.214(20/4)	Reacting mildly with water
PO(OC₂H₅)₃ TEOP	182.15	-56.4 deg C	log₁₀P=10.3308-2577/ (t+273.15)(P:Pa,t:deg C)	1.0695(20)	Reacting mildly with water
B(OCH₃)₃ TMB	103.91	-29.3 deg C	log₁₀P=10.232-1785.3/ (t+273.15)(P:Pa,t:deg C)	0.9205(24.3)	Readily hydrolyzed with moisture in the atmosphere
B(OCT₂H₅)₃ TEB	145.99	-84.8 deg C	log₁₀P=10.2666-2061/ (t+273.15)(P:Pa,t:deg C)	0.8635(20/4)	Readily hydrolyzed with moisture in the atmosphere
As(OC₂H₅)₃ TEOA	210.10	-	log₁₀P=7.28757-1996.1/ (t+273.15)(P:Pa,t:deg C)	1.2239(20)	Readily hydrolyzed with water

■ Materials for ALD

(* is our original products)
	Molecular Weight	Melting Point degrees Celsius	Vapor Pressures(Log₁₀P=)	Specific Gravity
Hf[N(CH₃)₂]₄ MSDS	354.79	28 deg C	log₁₀P=12.115-3377/ (t+273.15)(P:Pa,t:deg C)	1.48(50)	Decomposed by reacting violently with water. Decomposed by reacting oxygen in the atmosphere.
Hf[N(C₂H₅)CH₃]₄ MSDS	410.90	<-70 deg C	log₁₀P=12.595-3846/ (t+273.15)(P:Pa,t:deg C)	1.32(20)	Decomposed by reacting violently with water. Decomposed by reacting oxygen in the atmosphere.
Hf[N(C₂H₅)₂]₄ MSDS	167.01	-70 deg C	About 90 deg C/13.3Pa	1.25(20)	Decomposed by reacting violently with water. Decomposed by reacting oxygen in the atmosphere.
Zr[N(C₂H₅)CH₃]₄ MSDS	323.63	<-70 deg C	About 65 deg C/13.3Pa	1.05(20)	Decomposed by reacting violently with water. Decomposed by reacting oxygen in the atmosphere.
SiH[N(CH₃)₂]₃	161.32	-90 deg C	log₁₀P=10.177-2147/ (t+273.15)(P:Pa,t:deg C)	0.580(20)	Decomposed by reacting violently with water. Decomposed by reacting oxygen in the atmosphere.
Ta(NtC₅H₁₁)[N(CH₃)₂]₃ *Taimata MSDS	398.32	36 deg C	log₁₀P=10.795-3233/ (t+273.15)(P:Pa,t:deg C)	1.43	Decomposed by reacting violently with water. Decomposed by reacting oxygen in the atmosphere.

■ Materials for MOCVD

(* is our original products)
	Molecular Weight	Melting Point degrees Celsius	Vapor Pressures(Log₁₀P=)	Specific Gravity
Ta(Oc₂H₅)₅ MSDS	406.25	21 deg C	log₁₀P=12.645-4505/ (t+273.15)(P:Pa,t:deg C)	1.56	Hydrolyzed by reacting with moisture in the atmosphere
Hf(OtC₄H₉)₄ MSDS	407.94	8 deg C	log₁₀P=11.265-3052/ (t+273.15)(P:Pa,t:deg C)	1.17	Hydrolyzed by reacting with moisture in the atmosphere
Al(OsecC₄H₉)₃ MSDS	246.32	-60 deg C	log₁₀P=13.325-4698/ (t+273.15)(P:Pa,t:deg C)	0.937	Hydrolyzed by reacting with moisture in the atmosphere
Ru(C₅H₄C₂H₅)₂	287.36	6 deg C	log₁₀P=11.875-3708/ (t+273.15)(P:Pa,t:deg C)	1.56	Relatively stable in the atmosphere
Pb(C₁₁H₁₉O₂)₂	573.73	130 deg C	Sublime log₁₀P=20.545-7800/(t+273.15)(P:Pa,t:deg C) Evaporation log₁₀P=12.065-4480/(t+273.15)(P:Pa,t:deg C)	1.52	Relatively stable in the atmosphere
* Zr(OiC₃H₇)(C₁₁H₁₉O₂)₃	700.11	>210 deg C	log₁₀P=19.735-7924/ (t+273.15)(P:Pa,t:deg C)	1.0	Decomposed by reacting with moisture and oxygen in the atmosphere
Ti(OiC₃H₇)₂(C₁₁H₁₉O₂)₂	532.58	160 deg C	log₁₀P=14.855-5435/ (t+273.15)(P:Pa,t:deg C)	1.0	Decomposed by reacting with moisture and oxygen in the atmosphere

We are providing a wide range of items including the items listed above.
Prease feel free to contact one of here for more information.

Production System

Advanced techniques are required to produce CVD materials for its high purity and property.
Our techniques, such as the refining and the analysis of these materials, the cleaning and the maintenance of cylinders and even its manufacturing, have always been well-accepted by our customers.

Research and Development System

Kojundo Chemical Lab. Co., Ltd. is promoting advanced research and development of next-generation CVD materials in response to varied user's needs.
Our products have been developed through our refining technique of metal organic compounds, halogenide and alkoxides as a reagent manufacturer and our mass production technique of the silicon semiconductor materials, and we have prided ourselves on supplying high quality products to our customers.

How to supply our products

All products are contained in sealed containers such as a glass ampoule or a stainlesssteel cylinder so that metal organic compounds, halogenides and alkoxides may not react with moisture and oxygen in the air.

1. Glass Ampoule

Glass ampoule is most frequently used as a supplying container for alkoxide or halogenide. 25g, 50g, 250g and 500g types are standard fill ration. When purchasing our products in an ampoule, we recommend our customers to divide the quantity needed into small ampoules like 25g type for its preservation unless the large amount is needed at one time.

2. Stainless-steel Cylinder

(a) Stainless-steel Cylinder is used not only for the safe delivery of combustible substances such as organo metallic compounds, it is also possible to attach to the CVD devices directly and use it as a bubbler.
(b) We are able to supply the custom-designed cylinder filled with CVD materials.This order is based on the quantity needed and the size of its devices.