Sputtering Targets
Capable of manufacturing sputtering targets for diverse materials and compositions
Sputtering is performed in a vacuum chamber, where voltage is applied between the sputtering target (thin film material) and the substrate, and a small amount of gas is introduced to generate plasma. The material is ejected by plasma ions, reaches the substrate, adheres, and deposits to form a thin film.
Leveraging the technology we have cultivated, we accommodate custom fabrication with a wide range of element combinations and compositions.
Even for materials not listed on this site, please feel free to contact us first.
Features of Sputtering Targets
Sputtering targets are PVD materials that use plasma ions to deposit material onto substrates to form precise thin films.
At Kojundo Chemical Laboratory, we utilize our in-house melting and sintering technologies to manufacture various specialty and customized products, including 3- to 5-component multi-element alloys and complex oxides that are difficult for major manufacturers to handle.
Furthermore, our strength lies in our ability to handle everything in-house from raw material preparation to synthesis, sintering, precision processing, and bonding to backing plates.
Sputtering Target Product Examples
Metallic Targets / Metal Targets
| Pure Metals | Common Metals | Al、Bi、Co、Cr、Cu、Fe、Ge、Hf、In、Mg、Mn、Mo、Pb、Sb、Sc、Si 、Sn、Ta、Ti 、V、W、Y、Zn、Zr |
|---|---|---|
| Precious Metals | Ag、Au、Ir、Pd、Pt、Rh、Ru | |
| Rare Earth Metals | Ce、Dy、Er、Eu、Gd、Ho、La、Lu、Nd、Pr、Sm、Tb、Tm、Yb | |
| Alloys | Co-Fe-B, Fe-Co, Ni-Cr, Mn-Ga, etc. *4- to 9-element alloys available upon request. |
|
Fine Ceramics Targets
| Oxide Materials | Al2O3、MgO、SiO2、TiO2、ZnO、La2O3 、Ta2O5、Nb2O5、Mn3O4、SrRuO3、ITO（In2O3-SnO2）PZT（PbZrTiOx）、STO（SrTiO 3）、LiCoO2、Li4Ti5O12、Li3PO4 All Other Oxides |
|
|---|---|---|
| Carbide Materials | SiC、B4C、WC、TaC、TiC | |
| Other Compounds | Nitrides, Fluorides, Phosphides, Sulfides, Selenides | |
| Standard Sizes | ||
|---|---|---|
| Round | Diameter | φ25.4～φ300 class |
| Thickness | t0.5–approx. t16mm | |
| Warp(※2) | ≦±0.2mm | |
| Standard Sizes | ||
|---|---|---|
| Rectangular type | Diameter(※1) | 90～1000mm class |
| Thickness | t0.5–approx. t16mm | |
| Warp(※2) | ≦±0.2mm | |
※1: Split target configuration available depending on material and shape
※2: Subject to change depending on material and shape
High-Purity Materials
Various High-Purity Metal Products
We offer a wide range of materials tailored to your specific application.
Purity: 3N, 4N, 5N
Size: φ50.8–φ300mm
| Al | ～6N |
|---|---|
| Co | ～4N5 |
| Cu | ～6N |
| In | ～5N |
| Mg | ～4N5 |
| Mn | ～4N |
|---|---|
| Sn | ～5N |
| Ti | ～5N |
| Zn | ～5N |
| Other Various Alloys | |
| Ti Material Lineup Examples | |
|---|---|
| Purity | 3N、4N、5N |
| Size | φ25.4～φ300mm （Please contact us for diameters over φ300 or other custom shapes.） |
High-Purity Mg
We have established high-purification technology for Mg. Using this high-purity Mg, we supply sputtering targets.
Purity: 4N5
Size: φ50.8–φ164
Analysis Example (Unit: ppm)
| Element | High-Purity Mg 4N5 |
Standard Mg 3N5 |
|---|---|---|
| Ca | ND※ | 10 |
| Cd | ND※ | ND※ |
| Cu | ND※ | 10 |
| Fe | ND※ | 40 |
| Mn | ND※ | 40 |
| Zn | 20 | 20 |
※Below lower limit of quantification
High-Purity Mn
Because manganese is brittle, high purification of the target is difficult.
By optimizing manufacturing conditions, we have achieved high-purity Mn targets.
Purity：2N8～4N
Size：Φ50.8～φ164
Analysis Example (Unit: ppm)
| Element | High-Purity Mg 4N |
Standard Mn 2N8 |
|---|---|---|
| Ca | ND※ | ND※ |
| Cr | 20 | 130 |
| Fe | 30 | 1400 |
| Mg | ND※ | 70 |
| Si | ND※ | 10 |
※Below lower limit of quantification
Other Alloys: Co-Fe-B
Because Co-Fe-B is brittle, it is often manufactured using a sintering process.
We have established low-oxygen technology via melting methods and achieved high target purity through advanced purification techniques.
Co-Fe-B can be customized to your requirements, including adjusting composition ratios or adding a fourth element (Co-Fe-B-α).
Purity：4N
Gas Content：O < 70ppm
Size：φ50.8～φ300
B Content：≦ 20atm%
Analysis Example (Unit: ppm)
| Element | High-Purity CoFeB 4N |
Standard CoFeB 3N |
|---|---|---|
| Al | ND※ | ND※ |
| Cr | ND※ | 20 |
| Cu | 20 | 20 |
| Mn | ND※ | ND※ |
| Ni | ND※ | 150 |
| Si | 20 | 20 |
※Below lower limit of quantification
Dielectric and Piezoelectric Materials
Lead-free high-dielectric and piezoelectric materials
(K,Na)NbO3
We can supply various lead-free (Pb-free) piezoelectric materials. We have developed and provide stable (K, Na)NbOx (KNN) targets with excellent crystallinity.
| Material | KNN | |
|---|---|---|
| Composition Ratio | (KxNa1-x)NbO3 x＝0.1～0.9 |
|
| Size | φ50～φ300mm | |
| Thickness | t3～t10mm | |
| Density | Ave.3.7g/㎤ | |
| Impurities | Ca、Fe、Mn、Si、Ta<100ppm | |
High-Density LiNbO3
LiNbO₃ is a functional material that enables precise control of electricity and light. It is used in high-frequency filters for smartphones and optical communication devices, with high expectations for applications in quantum computing technology. Through proprietary technology, we have achieved high density in LiNbO₃, a material typically difficult to sinter. This suppresses particle generation during sputtering, enabling stable deposition and high-quality thin film formation.
・LiNbO3 target
・Available Outer Diameter (mm): φ20–φ300
・Available Thickness (mm): t3–t10
・Achieved Density: 90% (d = 4.64, relative)
・Achieved Purity: 99.9%
Examples of MEMS materials
| Gate Insulator | La2O3、HfO2、Y2O3、HfO2-Al2O3 | |
|---|---|---|
| Piezoelectric | PZT、PNZT、PLZT、PLT、PMN-PT、PNN-PZT、NaNbO3、KNbO3、KNN、BNT、BFO | |
| High-k | (BaSr)TiO3、SrTiO3 | |
| Electrode | Pt、Ir、Ru、RuO2、SrRuO3、LaNiO3、(LaSr)CoO3、Ti、TiN、TiOx、Ta | |
PZT、PNZT
We can supply products with low oxygen defects and excellent crystallinity.
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PZT Targets
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PNZT: Nb-doped PZT Targets
| Material | PZT | PNZT |
|---|---|---|
| Composition Ratio | PbaZrbTi1-bOx a=1.0～1.3 b=0.1～0.9 |
Pba(ZrbTi1-b)cNb1-cOx a=1.0～1.3 b=0.1～0.9 c=0.8～0.9 |
| Size | φ50～ | |
| Thickness | t3～t10 | |
| Purity | 3N （excluding Hf 2000-3000ppm） | |
| Impurities | Al、Cu、Ta＜100ppm | |
High-Density SrRuO3
SrRuOx (SRO) is used as a bottom electrode material in FeRAMs that utilize BST or PZT as capacitors. Using SRO for the bottom electrode is known to improve dielectric properties compared to Pt electrodes. Additionally, degradation due to reaction with the dielectric film during process heating is expected to be less than with Pt electrodes.
Using proprietary technology, we have developed high-density SRO (SRO-HD), which suppresses particle generation and enables stable film deposition.
Purity: 3N (excluding Zr)
Size: up to φ300
Density (Theoretical Density): 85% or higher (6.48 g/cm³)
Materials for SAW Filters
We manufacture targets used in SAW filter fabrication.
We supply a wide range of materials, from pure Al to Al alloy materials with customized compositions.
| Piezoelectric | LiTaO3、LiNbO3、AlN | |
|---|---|---|
| Electrodes | Al、Various Al Alloys、Mo、W | |
| Protective Layers | SiO2 | |
| Product Name | Purity |
|---|---|
| Ag | ～4N |
| Al | ～5N |
| Mo | ～3N7 |
| ZnS | ～4N |
| Product Name | Al Alloys | |
|---|---|---|
| Composition | Customizable | |
| Purity | 4N、5N | |
| Size | φ50.8～φ300mm (Please contact us for sizes over φ300) |
|
Battery and Energy-Related Materials
Secondary Battery Material Examples
We manufacture a wide range of materials that compose secondary batteries, including cathode materials, anode materials, and solid electrolytes. We supply sputtering targets, tablets, and molded sintered bodies as thin-film lithium battery materials. Please contact us for consultation regarding various shapes, combinations, and customization options.
| Cathode Materials | LiCoO2、LiFeO2、Li2MnO3、LiFePO4、LiCoPO4、LiMnPO4、LiMn2O4、Li(NiMn)2O4 | |
|---|---|---|
| Solid Electrolytes | Li3PO4、(LiLa)TiO3、Li2B4O7 | |
| Anode Materials | LiNbO3、Li2TiO3、Li4Ti5O12 | |
Solar Cell Material Examples
| Anti-Reflective Coating | MgF2、SiN、TiO2、SiO2 | |
|---|---|---|
| Transparent Conductive Oxide (TCO) Layers | GZO、ITO、IZO、TiO2-Nb | |
| Buffer Layers | ZnO、ZnS、AZO | |
| Light Absorbing Layers | CIS、CGS、CIGS、CAS、CZTS、S and/or Se Compounds and Other Composite Materials | |
| Electrodes | Ag、Al、Mo | |
Anti-Reflective Coating
| Product Name | Purity |
|---|---|
| SnO2 | ～4N |
| NbOx | 3N |
| TiO2 | ～4N |
| MgF2 | 3N |
| ZnS | ～4N |
Transparent Conductive Film
We supply targets and tablets for transparent conductive oxides (TCO) and amorphous oxide semiconductor applications.
| Product Name | Purity |
|---|---|
| In2O3-SnO2 | ～4N |
| Al-doped ZnO | ～4N |
Magnetic Device-Related Materials
TMR / GMR Element Material Examples
| Magnetic Layers | Co-Fe-B Co-Fe、Tb-Fe-Co、Ni-Fe、Ni-Fe-Co Co/Pt、Fe/Pt Mn Alloys such as Mn-Ga Co-Based Full-Heusler Alloys such as Co2(FeMn)Si |
|
|---|---|---|
| Barrier Layers | MgO、Mg | |
| Non-Magnetic Layers | Ag、Ag Alloys | |
| Spacer Layers | Ru、Cu、Ta | |
| Antiferromagnetic Layers | Ir-Mn、Pt-Mn | |
| Electrodes | Cr、Au、Ru、Ta | |
MgO
MgO is an essential functional material used in template layers for next-generation HDD media, as well as in magnetic devices such as TMR heads and MRAM.
Since 2002, we have been among the first to develop and manufacture sputtering targets optimized for TMR elements, supplying MgO targets characterized by high purity, high density, and low particle generation.
Co Alloys
Co alloys are materials used in a wide range of magnetic devices.
We have an extensive track record in supplying Co alloy targets of various compositions, starting with Co-Fe-B targets.
Examples: Co-Fe, Co-Fe-α, Co-Ni, Co-Zr-Nb, Co-Zr-Nb-Ta, etc.
Melt-Synthesized Co-Based Full-Heusler Alloys / Molten Co-Based Full-Heusler Alloys
Full-Heusler alloys ($X_2YZ$) are promising materials expected to find applications in magnetic devices such as MRAM and magnetic sensors.
Sintered targets were conventionally supplied, but their range of applications was constrained by issues such as composition deviation between the target and the deposited thin film.
Furthermore, due to their application in magnetic layers, there is strong demand for low-oxygen specifications. Melt-synthesized targets are expected to resolve these challenges associated with sintered targets.
Mn Alloys
Utilizing both sintering and melting processes, we manufacture various Mn alloy targets that show great promise as novel magnetic layer materials.
Because many of these alloys exhibit inherent brittleness, they are frequently produced via sintering processes.
On the other hand, their use in magnetic layers drives strong customer demand for low-oxygen specifications and larger target sizes. We continue to challenge ourselves to supply a diverse range of melt-synthesized targets to meet these requirements.
Mn Alloy：MnxGa100-x(55≦x≦75)
We are now able to supply large-sized melt-synthesized targets of Mn alloys ($\text{Mn}_x\text{Ga}_{100-x}$), which have recently attracted significant attention as noble-metal-free and rare-earth-free magnetic materials.
High-Entropy Alloys (HEA)
High-entropy alloys (HEAs), which create novel properties by combining multiple metals, are attracting significant attention in advanced fields such as semiconductors, energy, and aerospace.
We possess melting technology for multi-element alloys, including quaternary and quinary systems.
By uniformly alloying each element, we suppress composition variations and deliver high-quality sputtering targets.
Backing Plates
Through years of experience in sputtering target and bonding technologies, we are capable of manufacturing backing plates that fulfill a wide range of requirements.
Our backing plates (support plates for mounting sputtering target materials) are made from carefully selected materials based on customer applications, including oxygen-free copper (OFC), various copper alloys, steel, stainless steel, aluminum, aluminum alloys, molybdenum, and titanium.
We offer full compatibility across various material combinations and proactively propose design improvements tailored to customer usability and application needs.
We can manufacture custom backing plates starting from a single unit in various shapes—including round, rectangular, and custom shapes—ranging from small sizes of approximately 1 inch for research purposes to large-scale targets exceeding 2 meters for 7th generation LCDs.
For internal water-cooled backing plates, we utilize optimal joining methods such as brazing, electron beam welding (EBW), and diffusion bonding, tailored to specific manufacturing requirements.
Please consult our sales representatives regarding materials, shapes, design improvements, or custom specifications.
For new fabrications, please provide technical drawings or supply a sample unit, and we will handle everything from dimensional measurement to drawing generation.